Reactive ion etching of linbo3
WebSep 1, 2005 · The LiNbO3waveguide etched at a bias power of 300 W for 40 min showed an etching depth of 4.7 μm and an etching angle of 72°, while an etching depth of 4.7 μm and an etching angle of 72° were obtained when the waveguide was etched at a bias power of 400 W for 30 min. WebAug 1, 2013 · Reactive ion etching (RIE) of LiNbO 3 (LN) in SF 6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides. The samples …
Reactive ion etching of linbo3
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WebNov 15, 2004 · The etching characteristics of LiNbO3 and LiTaO3 single crystals have been investigated by performing plasma reactive ion etching (RIE) with CF4/Ar, CF4/H2, and CF2/Ar/H2 gas mixtures. The etched surface was evaluated by atomic force microscopy and X‐ray diffraction. The in situ surface temperature of the sample was measured during RIE. … WebFeb 1, 2000 · Etching characteristic of LiNbO3 has been investigated using plasma RIE. Etch rate increased in propotion to the atomic weight of inert gas in CF4+inert gas (He, Ne, Ar, …
WebFeb 6, 2024 · The LiNbO 3 wafers with the formed chromium hard mask were cut into 2 × 2 cm 2 -sized samples with a saw dicing Disco DAD 320, then the reactive ion etching … WebApr 2, 2024 · A new oblique method to etch LiNbO 3 memory cells at the surface of X-cut bulk crystals was proposed in this study. The process includes mask fabrication, oblique etching, and wet corrosion cleaning. The etching angle highly approaches 83° to achieve better polarization retention than others with etching angles of 0° and 70°.
WebHighly controllable silicon nano-grass formation is reported based on a hydrogen assisted reactive ion etching method in desirable shapes and locations. By controlling the etching parameters, one can achieve grass-free high aspect ratio vertical or three-dimensional structures on silicon substrates. On the other hand, one can program the ... WebAug 18, 2024 · Etching rates of different cuts of LN using the CHF 3 /Ar plasma. In Figure 5, we present the results using the described etching process for (a) the Ti/Al mask and (b) the Ti/Al/Cr mask. The presence of Al exposure to the plasma results in re-deposition of Al by-products, which are visible in Figure 5 a as “pyramids” or “cones”.
WebThe etching characteristics of congruent LiNbO3 single crystals including doped LiNbO3 and proton-changed LiNbO3 have been studied in reactive ion etching (RIE) and inductively …
WebAs a Materials Science and Engineering graduate student at the University of California, Los Angeles (UCLA), I am passionate about exploring the properties and behavior of electronic materials. My ... citizens forestsWebApr 1, 2006 · D. H. Yoon Lim Jae Won Chonbuk National University Abstract and Figures We describe the reactive ion etching of Ti : Li Nb O 3 single crystal in gas mixtures containing C... citizens for ethical governmentWebA transceiver device for receiving an interrogation signal at a first carrier frequency and for transmitting a response signal at a second carrier frequency is disclosed. The interrogation signal comprises the first carrier frequency modulated at the second carrier frequency. The communication device includes a sensor coupled to a demodulator. citizens for forest hillsWebJul 9, 1998 · The reactive ion etching of substrates used in piezoelectric devices (quartz, fused silica, LiNbO 3, LiTaO 3, and sapphire) has been characterized in CHF 3 / CF 4-based plasmas. For quartz and fused silica, a regime of ion-enhanced chemical etching similar to that established by Steinbruchel [Ch. Steinbruchel, J. Electrochem. Soc. dickey\\u0027s fried turkeyWebSep 1, 2024 · Ren Z 2008 Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma Journal of applied physics 103 1-8. Crossref Google Scholar. Poberaj G 2012 Lithium niobate on insulator (LNOI) for micro-photonic devices Laser & photonics reviews 6 488-503. citizens for european development of bulgariaWebAug 5, 2004 · The etching characteristics of LiNbO 3 and LiTaO 3 single crystals have been investigated by performing plasma reactive ion etching (RIE) with CF 4 /Ar, CF 4 /H 2, and … dickey\\u0027s frozen custardWebAug 4, 1998 · We describe the reactive ion etching of LiNbO 3 in gas mixtures containing CCl 2 F 2, CF 4, O 2, and Ar. The effects of gas composition and pressure, in the range 1–10‐μm total pressure are discussed. Because it is possible to replicate fine features … We describe the reactive ion etching of LiNbO 3 in gas mixtures containing CCl 2 … We would like to show you a description here but the site won’t allow us. We would like to show you a description here but the site won’t allow us. dickey\\u0027s frisco